Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

被引：72
|
作者：
Wang, Lian
Yoon, Myung-Han
Facchetti, Antonio
Marks, Tobin J.
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 20期
关键词：
D O I：
10.1002/adma.200700393
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Inorganic-organic hybrid TFTs have been fabricated at room temperature using IAD-derived high-quality semiconducting In2O3 and a crosslinked spin-coatable polymer gate dielectric. TFTs exhibiting field-effect mobilities up to 160 cm(2) V-1 s(-1), on Si and 10 cm(2) V-1 s(-1) on PET substrates have been demonstrated. TFTs on PET combine good transport characteristics as well as optical transparency and flexibility.
引用
收藏
页码：3252 / +
页数：6
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