Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

被引：72

作者：

Wang, Lian

Yoon, Myung-Han

Facchetti, Antonio

Marks, Tobin J.

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 20期

关键词：

D O I：

10.1002/adma.200700393

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Inorganic-organic hybrid TFTs have been fabricated at room temperature using IAD-derived high-quality semiconducting In2O3 and a crosslinked spin-coatable polymer gate dielectric. TFTs exhibiting field-effect mobilities up to 160 cm(2) V-1 s(-1), on Si and 10 cm(2) V-1 s(-1) on PET substrates have been demonstrated. TFTs on PET combine good transport characteristics as well as optical transparency and flexibility.

引用

页码：3252 / +

页数：6

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