Gain and internal losses in GaSb-based 2 μm quantum-well diode-lasers

被引：0
|
作者：
Rattunde, M [1 ]
Schmitz, J [1 ]
Kiefer, R [1 ]
Wagner, J [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：278 / 279
页数：2
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