ANOMALOUS TEMPERATURE-DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS

被引:55
|
作者
ZORY, PS [1 ]
REISINGER, AR [1 ]
WATERS, RG [1 ]
MAWST, LJ [1 ]
ZMUDZINSKI, CA [1 ]
EMANUEL, MA [1 ]
GIVENS, ME [1 ]
COLEMAN, JJ [1 ]
机构
[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,COMPOUND SEMICOND MICROELECTR LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.97086
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:16 / 18
页数:3
相关论文
共 50 条
  • [1] ANOMALOUS LENGTH DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS
    ZORY, PS
    REISINGER, AR
    MAWST, LJ
    COSTRINI, G
    ZMUDZINSKI, CA
    EMANUEL, MA
    GIVENS, ME
    COLEMAN, JJ
    ELECTRONICS LETTERS, 1986, 22 (09) : 475 - 477
  • [2] TEMPERATURE-DEPENDENCE OF THRESHOLD OF STRAINED QUANTUM-WELL LASERS
    DUTTA, NK
    LOPATA, J
    SIVCO, DL
    CHO, AY
    APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1125 - 1128
  • [3] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    COLAK, S
    KUCHARSKA, AI
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 599 - 601
  • [4] QUANTUM-WELL GAAS/ALGAAS DIODE-LASERS GROWN IN A PLANET OMVPE REACTOR
    VANDERPOEL, CJ
    AMBROSIUS, HPMM
    LINDERS, RWM
    KIWIET, NJ
    RIJPERS, J
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 300 - 306
  • [5] INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    FLETCHER, ED
    WOODBRIDGE, K
    HEASMAN, KC
    ADAMS, AR
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) : 1459 - 1468
  • [6] DIFFERENTIAL GAIN IN BULK AND QUANTUM-WELL DIODE-LASERS
    ZMUDZINSKI, CA
    ZORY, PS
    LIM, GG
    MILLER, LM
    BEERNINK, KJ
    COCKERILL, TL
    COLEMAN, JJ
    HONG, CS
    FIGUEROA, L
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (12) : 1057 - 1060
  • [7] CHARACTERIZATION OF DOUBLE QUANTUM WELL GAAS/ALGAAS DIODE-LASERS
    OU, SS
    YANG, JJ
    WILCOX, JZ
    JANSEN, M
    ELECTRONICS LETTERS, 1988, 24 (15) : 952 - 953
  • [8] OMVPE GROWTH OF STRAINED-LAYER INGAAS/ALGAAS HETEROSTRUCTURES FOR QUANTUM-WELL DIODE-LASERS
    WANG, CA
    CHOI, HK
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 47 - 48
  • [9] TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES
    COLOCCI, M
    GURIOLI, M
    VINATTIERI, A
    FERMI, F
    DEPARIS, C
    MASSIES, J
    NEU, G
    EUROPHYSICS LETTERS, 1990, 12 (05): : 417 - 422
  • [10] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER
    HESS, K
    VOJAK, BA
    HOLONYAK, N
    CHIN, R
    SOLID-STATE ELECTRONICS, 1980, 23 (06) : 585 - 589