Entropies associated with electron emission from InAs/GaAS quantum dots

被引：5
|
作者：
Engström, O [1 ]
Fu, Y [1 ]
Eghtedari, A [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 04期
关键词：
quantum dots; thermal emission rate; entropy factor;
D O I：
10.1016/j.physe.2005.01.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Entropies associated with the transition of electrons into and out of InAs/GaAs quantum dots (QDs) are calculated by considering the temperature dependence of energy eigenvalues due to strain and energy band offset variations. It is found that, for InAs/GaAs quantum dots with base/height dimensions of 20/10nm, the contribution from the surrounding lattice to entropy is smaller than 4 x 10(-5) eV/K for the temperature region below 100 K, where most measurements of thermal emission rates are performed. Including the electron degeneracy, the total entropy change has an upper limit of 1 x 10(-4) eV/K when releasing the first electron from the s-shell, while the second released s-electron is connected with an entropy change not larger than the absolute value of -2 x 10(-5) eV/K. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：380 / 384
页数：5
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