Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

被引：10

作者：

Perinetti, U. ^{[1
]}

Akopian, N. ^{[1
]}

Samsonenko, Yu. B. ^{[2
,3
,4
]}

Bouravleuv, A. D. ^{[2
,3
]}

Cirlin, G. E. ^{[2
,3
,4
]}

Zwiller, V. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[4] Inst Analyt Instrumentat, St Petersburg 190103, Russia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

excitons; fine structure; III-V semiconductors; indium compounds; monolayers; photoluminescence; semiconductor quantum dots; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; PHOTONS; TEMPERATURE; THICKNESS; GAAS(100);

D O I：

10.1063/1.3125430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski-Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime measurements reveal an exciton lifetime of 500 ps. Polarization measurements show an exciton fine structure splitting of 15 mu eV and allow to identify the exciton and charged exciton transitions with linewidth as narrow as 23 mu eV.

引用

页数：3

共 50 条

[1] Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
Talalaev, VG
Novikov, BV
Verbin, SY
Novikov, AB
Thath, DS
Shchur, IV
Gobsch, G
Goldhahn, R
Stein, N
Golombek, A
Tsyrlin, GÉ
Petrov, VN
Ustinov, VM
Zhukov, AE
Egorov, AY
SEMICONDUCTORS, 2000, 34 (04) : 453 - 461
[2] Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
V. G. Talalaev
B. V. Novikov
S. Yu. Verbin
A. B. Novikov
Dinh Son Thath
I. V. Shchur
G. Gobsch
R. Goldhahn
N. Stein
A. Golombek
G. É. Tsyrlin
V. N. Petrov
V. M. Ustinov
A. E. Zhukov
A. Yu. Egorov
Semiconductors, 2000, 34 : 453 - 461
[3] Sharp exciton emission from single InAs quantum dots in GaAs nanowires
Panev, N
Persson, AI
Sköld, N
Samuelson, L
APPLIED PHYSICS LETTERS, 2003, 83 (11) : 2238 - 2240
[4] Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] direction
Evtikhiev, VP
Tokranov, VE
Kryganovskii, AK
Boiko, AM
Suris, RA
Titkov, AN
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1154 - 1157
[5] μm single photon emission from InAs/GaAs quantum dots
Zhang Zhi-Wei
Zhao Cui-Lan
Sun Bao-Quan
ACTA PHYSICA SINICA, 2018, 67 (23)
[6] Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
Evtikhiev, VP
Tokranov, VE
Kryzhanovskii, AK
Boiko, AM
Suris, RA
Titkov, AN
Nakamura, A
Ichida, M
SEMICONDUCTORS, 1998, 32 (07) : 765 - 769
[7] Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
V. P. Evtikhiev
V. E. Tokranov
A. K. Kryzhanovskii
A. M. Boiko
R. A. Suris
A. N. Titkov
A. Nakamura
M. Ichida
Semiconductors, 1998, 32 : 765 - 769
[8] Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate
Beji, L
Bouzaïene, L
Ismaïl, B
Sfaxi, L
Maaref, H
Ben Ouada, H
MICROELECTRONICS JOURNAL, 2005, 36 (02) : 99 - 103
[9] Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
Martin-Sanchez, J.
Munoz-Matutano, G.
Herranz, J.
Canet-Ferrer, J.
Alen, B.
Gonzalez, Y.
Alonso-Gonzalez, P.
Fuster, D.
Gonzalez, L.
Martinez-Pastor, J.
Briones, F.
ACS NANO, 2009, 3 (06) : 1513 - 1517
[10] Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
Kudryashov, IV
Evtikhiev, VP
Tokranov, VE
Kotel'nikov, EY
Kryganovskii, AK
Titkov, AN
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1158 - 1160

← 1 2 3 4 5 →