Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination

被引：3

作者：

Sheridan, DC

Merrett, JN

Cressler, JD

Saddow, SE

Williams, JR

Ellis, CE

Niu, G

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Mississippi State Univ, Emerging Mat Res Lab, Mississippi State, MS 39762 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

edge termination; guard ring; Junction Barrier Schottky (JBS); Schottky diodes; simulation;

D O I：

10.4028/www.scientific.net/MSF.353-356.687

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC JBS rectifiers were designed with multiple floating guard ring termination using numerical simulation methods, and were fabricated using a simplified self-aligned process sequence. Simulations were used to investigate forward voltage drop and reverse electric field shielding with respect to JBS spacing. Optimized devices were fabricated on 30 mum lightly doped n-epitaxial layers. JBS diodes exhibited 2.5kV blocking capability with reverse leakage currents below 2x10(-5) Acm(-2) at 2kV, and a forward voltage drop of 2.95V at 100Acm(-2).

引用

页码：687 / 690

页数：4

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