Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination

被引：3
|
作者：
Sheridan, DC
Merrett, JN
Cressler, JD
Saddow, SE
Williams, JR
Ellis, CE
Niu, G
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[3] Mississippi State Univ, Emerging Mat Res Lab, Mississippi State, MS 39762 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
edge termination; guard ring; Junction Barrier Schottky (JBS); Schottky diodes; simulation;
D O I：
10.4028/www.scientific.net/MSF.353-356.687
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC JBS rectifiers were designed with multiple floating guard ring termination using numerical simulation methods, and were fabricated using a simplified self-aligned process sequence. Simulations were used to investigate forward voltage drop and reverse electric field shielding with respect to JBS spacing. Optimized devices were fabricated on 30 mum lightly doped n-epitaxial layers. JBS diodes exhibited 2.5kV blocking capability with reverse leakage currents below 2x10(-5) Acm(-2) at 2kV, and a forward voltage drop of 2.95V at 100Acm(-2).
引用
收藏
页码：687 / 690
页数：4
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