Recent advances in microwave applications of thin ferroelectric films at the NASA Glenn Research Center

被引:0
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作者
Romanofsky, RR [1 ]
Miranda, FA [1 ]
Van Keuls, FW [1 ]
Valerio, MD [1 ]
机构
[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on recent developments in microwave applications and understanding of thin Ba50Sr50TiO3 films. Most of our recent efforts have focused oil developing low loss, wide band phase shifters from X-band (8.4 GHz) to Ka-Band (26.5 GHz) for scanning reflectarray antennas. Attempts to reduce tan delta by Mn-doping Ba50Sr50TiO3 films are briefly discussed. We have demonstrated a hybrid device at X-band that produces in excess of 300 degrees of phase shift with about 3.5 dB insertion loss and greater that 10% bandwidth. Preliminary results are presented here. The effects of mild (600 rad Si) proton radiation on device performance will also be discussed. Preliminary results oil optical phase shifters will be included.
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页码:173 / 181
页数:9
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