Recent advances in microwave applications of thin ferroelectric films at the NASA Glenn Research Center

被引：0

作者：

Romanofsky, RR ^{[1
]}

Miranda, FA ^{[1
]}

Van Keuls, FW ^{[1
]}

Valerio, MD ^{[1
]}

机构：

[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

来源：

MATERIALS, INTEGRATION AND PACKAGING ISSUES FOR HIGH-FREQUENCY DEVICES II | 2005年 / 833卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on recent developments in microwave applications and understanding of thin Ba50Sr50TiO3 films. Most of our recent efforts have focused oil developing low loss, wide band phase shifters from X-band (8.4 GHz) to Ka-Band (26.5 GHz) for scanning reflectarray antennas. Attempts to reduce tan delta by Mn-doping Ba50Sr50TiO3 films are briefly discussed. We have demonstrated a hybrid device at X-band that produces in excess of 300 degrees of phase shift with about 3.5 dB insertion loss and greater that 10% bandwidth. Preliminary results are presented here. The effects of mild (600 rad Si) proton radiation on device performance will also be discussed. Preliminary results oil optical phase shifters will be included.

引用

页码：173 / 181

页数：9

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