SiO2 formation at the aluminum Oxide/Si(100) interface

被引：0

作者：

Chowdhuri, AR ^{[1
]}

Takoudis, CG ^{[1
]}

Klie, RF ^{[1
]}

Browning, ND ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA

来源：

CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS | 2003年 / 747卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300degreesC. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3, On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.

引用

页码：335 / 340

页数：6

共 50 条

[41] The impact of rapid thermal annealing on the properties of the Si(100)-SiO2 interface
Hurley, PK
Leveugle, C
Mathewson, A
Doyle, D
Whiston, S
Prendergast, J
Lundgren, P
DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II, 1998, 510 : 659 - 664
[42] Computer study of phosphorus segregation mechanisms at a SiO2/Si(100) interface
Zavodinskii, VG
SEMICONDUCTORS, 2000, 34 (03) : 296 - 299
[43] Microscopic theory of oxygen reaction mechanisms at SiO2/Si(100) interface
Akiyama, T
Kageshima, H
Ito, T
Physics of Semiconductors, Pts A and B, 2005, 772 : 393 - 394
[44] Computer study of phosphorus segregation mechanisms at a SiO2/Si(100) interface
V. G. Zavodinskii
Semiconductors, 2000, 34 : 296 - 299
[45] Si(100)-SiO2 interface properties following rapid thermal processing
O'Sullivan, BJ
Hurley, PK
Leveugle, C
Das, JH
JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3811 - 3820
[46] Atomistic structure of the Si(100)-SiO2 interface:: A synthesis of experimental data
Bongiorno, A
Pasquarello, A
APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1417 - 1419
[47] INTERFACE TRAPS AT MIDGAP DURING DEFECT TRANSFORMATION IN (100) SI/SIO2
NISHIOKA, Y
MA, TP
APPLIED PHYSICS LETTERS, 1988, 53 (18) : 1744 - 1746
[48] Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing
Afanas'ev, VV
Stesmans, A
APPLIED PHYSICS LETTERS, 1998, 72 (01) : 79 - 81
[49] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
Ming, Z
Nakajima, K
Suzuki, M
Kimura, K
Uematsu, M
Torii, K
Kamiyama, S
Nara, Y
Yamada, K
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[50] Epitaxial SiC formation at the SiO2/Si interface by C+ implantation into SiO2 and subsequent annealing
Voelskow, M
Panknin, D
Polychroniadis, EK
Ferro, G
Godignion, P
Mestres, N
Skorupa, W
Monteil, Y
Stoemenos, J
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 233 - 236

← 1 2 3 4 5 →