SiO2 formation at the aluminum Oxide/Si(100) interface

被引：0
|
作者：
Chowdhuri, AR [1 ]
Takoudis, CG [1 ]
Klie, RF [1 ]
Browning, ND [1 ]
机构：
[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA
来源：
CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS | 2003年 / 747卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300degreesC. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3, On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.
引用
收藏
页码：335 / 340
页数：6
相关论文
共 50 条
  • [31] MICROVOIDS AT THE SIO2/SI INTERFACE
    NIELSEN, B
    LYNN, KG
    WELCH, DO
    LEUNG, TC
    RUBLOFF, GW
    PHYSICAL REVIEW B, 1989, 40 (02): : 1434 - 1437
  • [32] MEASUREMENTS OF THIN OXIDE-FILMS OF SIO2/SI(100)
    LENNARD, WN
    MASSOUMI, GR
    MITCHELL, IV
    TANG, HT
    MITCHELL, DF
    BARDWELL, JA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 42 - 46
  • [33] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
    OGURA, A
    AIZAKI, N
    APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549
  • [34] SILICON SILICON BONDS IN THE OXIDE NEAR THE SIO2/SI INTERFACE
    TERADA, N
    HAGA, T
    MIYATA, N
    MORIKI, K
    FUJISAWA, M
    MORITA, M
    OHMI, T
    HATTORI, T
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 832 - 835
  • [35] THE SI(001)/SIO2 INTERFACE
    OURMAZD, A
    FUOSS, PH
    BEVK, J
    MORAR, JF
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 365 - 371
  • [36] Migration of organic residuals in interlayer oxide to SiO2/Si interface
    Kodama, N
    Mori, H
    Saito, S
    Koyama, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 118 (1-4): : 505 - 508
  • [37] FORMATION OF SIO AT SI/SIO2 INTERFACE AND ITS INFLUENCE ON TRANSPORT OF GROUP V DOPANTS AND GE IN SIO2
    CELLER, GK
    TRIMBLE, LE
    APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 245 - 258
  • [38] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
    HOBBS, A
    BARKLIE, RC
    REESON, K
    HEMMENT, PLF
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
  • [39] Density relative change and interface zone mutual diffusion of BiFeO3 films prepared on Si (100), SiO2 and SiO2/Si (100)
    Xiao, RenZheng
    Wang, ZeSong
    Yuan, XianBao
    Zhou, JianJun
    Mao, ZhangLiang
    Su, HuaShan
    Li, Bo
    Fu, DeJun
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 384 : 106 - 112
  • [40] DEFECT FORMATION IN SIO2/SI(100) BY METAL DIFFUSION AND REACTION
    LIEHR, M
    DALLAPORTA, H
    LEWIS, JE
    APPLIED PHYSICS LETTERS, 1988, 53 (07) : 589 - 591
12345