A 300-MHz-band, sub-1 V and sub-1 mW CMOS SAW oscillator suitable for use in RF transmitters

被引：1
|
作者：
Kozaki, M [1 ]
Hama, N [1 ]
机构：
[1] Seiko Epson, Nagano 3990293, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2005年 / E88C卷 / 04期
关键词：
ultra low power fully depleted SOI; SAW oscillator; remote keyless entry;
D O I：
10.1093/ietele/e88-c.4.502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ultra low power CMOS SAW oscillator in the 300MHz-band that operates on a sub-1V supply voltage and at sub-1 mW power consumption has been developed. The SAW oscillator is fabricated in a 0.35-mu m fully depleted SOI (FD-SOI) process with low voltage operation capability. The SAW oscillator is configured as a type of Colpitts oscillator but consists of 3 cascaded amplifiers instead of a single amplifier. Although the circuit configuration is quite similar to the conventional Colpitts oscillator, this proposed configuration generates an excessively high negative resistance that even exceeds the theoretical limit of the conventional one.
引用
收藏
页码：502 / 508
页数：7
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