1.55-μm and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

被引：55
|
作者：
Lee, MK [1 ]
Chu, CH
Wang, YH
Sze, SM
机构：
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
OPTICS LETTERS | 2001年 / 26卷 / 03期
关键词：
D O I：
10.1364/OL.26.000160
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum. The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum, 10-mW laser diode. The corresponding quantum efficiency is 14.4%. (C) 2001 Optical Society of America.
引用
收藏
页码：160 / 162
页数：3
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