Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors

被引：45
|
作者：
Inokawa, H [1 ]
Fujiwara, A [1 ]
Takahashi, Y [1 ]
机构：
[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期
关键词：
D O I：
10.1063/1.1421085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal-oxide-semiconductor field-effect transistor (MOSFET), and can, in principle, generate an infinite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process and a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memory operation is successfully demonstrated. (C) 2001 American Institute of Physics.
引用
收藏
页码：3618 / 3620
页数：3
相关论文
共 50 条
  • [31] Observation and circuit application of negative differential conductance in silicon single-electron transistors
    Ono, Y
    Takahashi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2569 - 2573
  • [32] Investigation of AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors
    Huang, Li-Hsien
    Lu, Chien-liang
    Lee, Ching-Ting
    TENCON 2007 - 2007 IEEE REGION 10 CONFERENCE, VOLS 1-3, 2007, : 1433 - 1435
  • [33] Flicker Noises of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
    Lee, Ching-Ting
    Huang, Li-Hsien
    Chiou, Ya-Lan
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (07) : H734 - H738
  • [34] Tunable Negative Differential Resistance of Single-Electron Transistor Controlled by Capacitance
    Chen, Xiaobao
    Xing, Zuocheng
    Sui, Bingcai
    COMPUTER ENGINEERING AND TECHNOLOGY, NCCET 2013, 2013, 396 : 228 - 234
  • [35] Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology
    Pourghaderi, M. Ali
    Magnus, Wim
    Soree, Bart
    Meuris, Marc
    De Meyer, Kristin
    Heyns, Marc
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [36] Trivalued memory circuit using metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance circuits fabricated by standard SiGe process
    Gan, Kwang-Jow
    Tsai, Cher-Shiung
    Liang, Dong-Shong
    Wen, Chun-Ming
    Chen, Yaw-Hwang
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (33-36): : L977 - L979
  • [37] Trivalued memory circuit using metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance circuits fabricated by standard SiGe process
    Gan, Kwang-Jow
    Tsai, Cher-Shiung
    Liang, Dong-Shong
    Wen, Chun-Ming
    Chen, Yaw-Hwang
    Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (33-36):
  • [38] Room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel
    Univ of Minnesota, Minneapolis, United States
    Appl Phys Lett, 7 (850-852):
  • [39] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
    Fujiwara, Akira
    Nishiguchi, Katsuhiko
    Ono, Yukinori
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [40] A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel
    Guo, LJ
    Leobandung, E
    Chou, SY
    APPLIED PHYSICS LETTERS, 1997, 70 (07) : 850 - 852
12345