Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

被引：0

作者：

Benmansour, A. ^{[1
]}

Azzopardi, S. ^{[1
]}

Martin, J. C. ^{[1
]}

Woirgard, E. ^{[1
]}

机构：

[1] IMS ENSEIRB, F-33405 Talence, France

来源：

2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10 | 2007年

关键词：

IGBT; power semiconductor device; simulation; clamped inductive switching;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results slow that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.

引用

页码：63 / 72

页数：10

共 42 条

[41] Advanced 60μm thin 600V Punch-Through IGBT concept for extremely low forward voltage and low turn-off loss
Matsudai, T
Nozaki, H
Umekawa, S
Tanaka, M
Kobayashi, M
Hattori, H
Nakagawa, A
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 441 - 444
[42] Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs
Azzopardi, S
Kawamura, A
Iwamoto, H
Briat, O
Vinassa, JM
Woirgard, E
Zardini, C
MICROELECTRONICS RELIABILITY, 2001, 41 (9-10) : 1731 - 1736

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