Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

被引：0
|
作者：
Benmansour, A. [1 ]
Azzopardi, S. [1 ]
Martin, J. C. [1 ]
Woirgard, E. [1 ]
机构：
[1] IMS ENSEIRB, F-33405 Talence, France
来源：
2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10 | 2007年
关键词：
IGBT; power semiconductor device; simulation; clamped inductive switching;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results slow that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.
引用
收藏
页码：63 / 72
页数：10
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