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- [31] The Electrical Bias Influence on the Total Ionizing Dose Degradation of the MOST ParametersINTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON 2021 ), 2021,Borisov, Alexey Y.论文数: 0 引用数: 0 h-index: 0机构: Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, Russia Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, RussiaBorisov, Alexander Y.论文数: 0 引用数: 0 h-index: 0机构: Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, Russia Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, RussiaNefedova, Anastasia A.论文数: 0 引用数: 0 h-index: 0机构: Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, Russia Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, RussiaChukov, George, V论文数: 0 引用数: 0 h-index: 0机构: Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, Russia Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoe Hwy 31, Moscow 115409, Russia
- [32] Total ionizing dose effects and bias dependence in selected bipolar devicesNSREC: 2006 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2006, : 50 - +Chavez, R. M.论文数: 0 引用数: 0 h-index: 0机构: CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USARax, B. G.论文数: 0 引用数: 0 h-index: 0机构: CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USAJohnston, A. H.论文数: 0 引用数: 0 h-index: 0机构: CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
- [33] Total dose bias dependency and ELDRS effects in bipolar linear devices2002 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2002, : 131 - 137Yui, CC论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USAMcClure, SS论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USARax, BG论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USALehman, JM论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USAMinto, TD论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USAWiedeman, MD论文数: 0 引用数: 0 h-index: 0机构: Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA Jet Prop Lab, Elect Parts Engn Off, Pasadena, CA 91109 USA
- [34] Investigation of total ionizing dose effect on SOI tunnel FETSUPERLATTICES AND MICROSTRUCTURES, 2019, 133论文数: 引用数: h-index:机构:Narang, Rakhi论文数: 0 引用数: 0 h-index: 0机构: Univ Delhi, Sri Venkateswara Coll, Dept Elect, New Delhi 110021, India Univ Delhi South Campus, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, IndiaSaxena, Manoj论文数: 0 引用数: 0 h-index: 0机构: Univ Delhi, Deen Dayal Upadhyaya Coll, Dept Elect, New Delhi 110078, India Univ Delhi South Campus, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India论文数: 引用数: h-index:机构:
- [35] TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,Huang, Yang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaLi, Binhong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China论文数: 引用数: h-index:机构:Li, Bo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaShen, Chen论文数: 0 引用数: 0 h-index: 0机构: Cogenda Corp, Suzhou, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaSong, Yanfu论文数: 0 引用数: 0 h-index: 0机构: Cogenda Corp, Suzhou, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaWang, Lei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaLi, Duoli论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaLiu, Hainan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaHan, Zhengsheng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Univ Chinese Acad Sci, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R ChinaLuo, Jiajun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China Univ Chinese Acad Sci, Beijing, Peoples R China Chinese Acad Sci, Key Lab Silicon Device Technol, Inst Microelect, Beijing, Peoples R China
- [36] Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETsSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (01)Tan, Fei论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaHuang, Ru论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaAn, Xia论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaWu, Weikang论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaFeng, Hui论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaHuang, Liangxi论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaFan, Jiewen论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaZhang, Xing论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaWang, Yangyuan论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China
- [37] Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate DielectricsIEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 164 - 169Ren, Shufeng论文数: 0 引用数: 0 h-index: 0机构: Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA Yale Univ, CRISP, New Haven, CT 06511 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USABhuiyan, Maruf A.论文数: 0 引用数: 0 h-index: 0机构: Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA Yale Univ, CRISP, New Haven, CT 06511 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAZhang, Jingyun论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, W Lafayette, IN 47907 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USALou, Xiabing论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Cambridge, MA 02138 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USASi, Mengwei论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, W Lafayette, IN 47907 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAGong, Xian论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Cambridge, MA 02138 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAJiang, Rong论文数: 0 引用数: 0 h-index: 0机构: Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USANi, Kai论文数: 0 引用数: 0 h-index: 0机构: Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAWan, Xin论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Beijing 100084, Peoples R China Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAZhang, En Xia论文数: 0 引用数: 0 h-index: 0机构: Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA论文数: 引用数: h-index:机构:Reed, Robert A.论文数: 0 引用数: 0 h-index: 0机构: Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAFleetwood, Daniel M.论文数: 0 引用数: 0 h-index: 0机构: Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAYe, Peide论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, W Lafayette, IN 47907 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USAMa, T. P.论文数: 0 引用数: 0 h-index: 0机构: Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA Yale Univ, CRISP, New Haven, CT 06511 USA Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
- [38] Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETsIEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 1990 - 1994Tang, Yun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Lei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaCai, Xiaowu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaHu, Dongqing论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Elect Informat & Control Engn, Power Semicond & Integrated Circuit Lab, Beijing 100124, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaDong, Bin论文数: 0 引用数: 0 h-index: 0机构: Guangdong Acad Sci, Inst Semicond, Guangzhou 510650, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaDing, Liqiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaGao, Yuexin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaXia, Ruirui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaGao, Mali论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Shiping论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaDang, Jianying论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaZhao, Fazhan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R ChinaLi, Bo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
- [39] Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETsRADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 177 (3-4): : 372 - 382论文数: 引用数: h-index:机构:Cui, Jiang-Wei论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R ChinaZheng, Qi-Wen论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R ChinaWei, Ying论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R ChinaLi, Yu-Dong论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R ChinaGuo, Qi论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China
- [40] Total dose and dose rate response of low dropout voltage regulatorsNSREC: 2006 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2006, : 85 - +Pease, Ronald L.论文数: 0 引用数: 0 h-index: 0机构: RLP Res, Los Lunas, NM 87031 USA RLP Res, Los Lunas, NM 87031 USADunham, Gary W.论文数: 0 引用数: 0 h-index: 0机构: NAVSEA Crane, Crane, IN 47522 USA RLP Res, Los Lunas, NM 87031 USASeiler, John E.论文数: 0 引用数: 0 h-index: 0机构: NAVSEA Crane, Crane, IN 47522 USA RLP Res, Los Lunas, NM 87031 USA