Investigation of Application-Specific Bias Conditions and Dose Rate Dependency in Total Ionizing Dose (TID) Response

被引:0
|
作者
Bozovich, Amanda N. [1 ,2 ]
Duc Nguyen [2 ]
Rax, Bernard G. [2 ]
Davila, Joe [2 ]
Zajac, Stephanie A. [2 ]
机构
[1] CALTECH, Jet Prop Lab, NASA, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
[2] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
关键词
D O I
10.1109/REDW51883.2020.9325830
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
This paper investigates flight circuit application bias and irradiation dose rate dependencies ("test as you fly" conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
引用
收藏
页码:13 / 18
页数:6
相关论文
共 50 条
  • [31] The Electrical Bias Influence on the Total Ionizing Dose Degradation of the MOST Parameters
    Borisov, Alexey Y.
    Borisov, Alexander Y.
    Nefedova, Anastasia A.
    Chukov, George, V
    INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON 2021 ), 2021,
  • [32] Total ionizing dose effects and bias dependence in selected bipolar devices
    Chavez, R. M.
    Rax, B. G.
    Johnston, A. H.
    NSREC: 2006 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2006, : 50 - +
  • [33] Total dose bias dependency and ELDRS effects in bipolar linear devices
    Yui, CC
    McClure, SS
    Rax, BG
    Lehman, JM
    Minto, TD
    Wiedeman, MD
    2002 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2002, : 131 - 137
  • [34] Investigation of total ionizing dose effect on SOI tunnel FET
    Dubey, Avashesh
    Narang, Rakhi
    Saxena, Manoj
    Gupta, Mridula
    SUPERLATTICES AND MICROSTRUCTURES, 2019, 133
  • [35] TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET
    Huang, Yang
    Li, Binhong
    Cristoloveanu, Sorin
    Li, Bo
    Shen, Chen
    Song, Yanfu
    Wang, Lei
    Li, Duoli
    Liu, Hainan
    Han, Zhengsheng
    Luo, Jiajun
    2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
  • [36] Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs
    Tan, Fei
    Huang, Ru
    An, Xia
    Wu, Weikang
    Feng, Hui
    Huang, Liangxi
    Fan, Jiewen
    Zhang, Xing
    Wang, Yangyuan
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (01)
  • [37] Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics
    Ren, Shufeng
    Bhuiyan, Maruf A.
    Zhang, Jingyun
    Lou, Xiabing
    Si, Mengwei
    Gong, Xian
    Jiang, Rong
    Ni, Kai
    Wan, Xin
    Zhang, En Xia
    Gordon, Roy G.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Ye, Peide
    Ma, T. P.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 164 - 169
  • [38] Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs
    Tang, Yun
    Wang, Lei
    Cai, Xiaowu
    Hu, Dongqing
    Dong, Bin
    Ding, Liqiang
    Gao, Yuexin
    Xia, Ruirui
    Gao, Mali
    Wang, Shiping
    Dang, Jianying
    Zhao, Fazhan
    Li, Bo
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 1990 - 1994
  • [39] Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
    Cui, Xu
    Cui, Jiang-Wei
    Zheng, Qi-Wen
    Wei, Ying
    Li, Yu-Dong
    Guo, Qi
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 177 (3-4): : 372 - 382
  • [40] Total dose and dose rate response of low dropout voltage regulators
    Pease, Ronald L.
    Dunham, Gary W.
    Seiler, John E.
    NSREC: 2006 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2006, : 85 - +