Vertical InGaN light-emitting diodes with Ag paste as bonding layer

被引：4

作者：

Yang, Y. C. ^{[1
]}

Sheu, Jinn-Kong ^{[1
,2
]}

Lee, Ming-Lun ^{[2
,3
]}

Hsu, Che-Kang ^{[1
]}

Tu, Shang-Ju ^{[1
]}

Liu, Shu-Yen ^{[1
]}

Yang, C. C. ^{[1
]}

Huang, Feng-Wen ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[2] So Taiwan Univ, Dept Electroopt Engn, Tainan 71005, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micronanosci & Technol, Tainan 70101, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 05期

关键词：

GAN; FABRICATION;

D O I：

10.1016/j.microrel.2011.06.067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 degrees C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：949 / 951

页数：3

共 50 条

[41] Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers
Kuo, Yen-Kuang
Wang, Tsun-Hsin
Chang, Jih-Yuan
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (07) : 946 - 951
[42] Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers
Chang, Jih-Yuan
Chang, Yi-An
Chen, Fang-Ming
Kuo, Yih-Ting
Kuo, Yen-Kuang
IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (01) : 55 - 58
[43] Influence of light-emitting layer position on white organic light-emitting diodes
Xiang, Dong-Xu
Li, Hai-Rong
Xie, Long-Zhen
Yang, Jia-Ming
Wang, Fang
Yuan, Chao-Xin
Sun, Yong-Zhe
Faguang Xuebao/Chinese Journal of Luminescence, 2015, 36 (07): : 821 - 828
[44] Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
J Appl Phys, 11 (5816):
[45] The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes
Jang, Ho Won
Ryu, Seong Wook
Yu, Hak Ki
Lee, Sanghan
Lee, Jong-Lam
NANOTECHNOLOGY, 2010, 21 (02)
[46] Mechanism of optical degradation in microstructured InGaN light-emitting diodes
Li, Z. L.
Li, K. H.
Choi, H. W.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
[47] On the origin of spin loss in GaMnN/InGaN light-emitting diodes
Buyanova, IA
Izadifard, M
Chen, WM
Kim, J
Ren, F
Thaler, G
Abernathy, CR
Pearton, SJ
Pan, CC
Chen, GT
Chyi, JI
Zavada, JM
APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2599 - 2601
[48] Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes
Joachim Piprek
Zhan-Ming Li
Optical and Quantum Electronics, 2016, 48
[49] Recent progresses on InGaN quantum dot light-emitting diodes
Wang L.
Lv W.
Hao Z.
Luo Y.
Frontiers of Optoelectronics, 2014, 7 (3) : 293 - 299
[50] Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes
Piprek, Joachim
Li, Zhan-Ming
OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (10)

← 1 2 3 4 5 →