Vertical InGaN light-emitting diodes with Ag paste as bonding layer

被引：4
|
作者：
Yang, Y. C. [1 ]
Sheu, Jinn-Kong [1 ,2 ]
Lee, Ming-Lun [2 ,3 ]
Hsu, Che-Kang [1 ]
Tu, Shang-Ju [1 ]
Liu, Shu-Yen [1 ]
Yang, C. C. [1 ]
Huang, Feng-Wen [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan
[2] So Taiwan Univ, Dept Electroopt Engn, Tainan 71005, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micronanosci & Technol, Tainan 70101, Taiwan
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 05期
关键词：
GAN; FABRICATION;
D O I：
10.1016/j.microrel.2011.06.067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 degrees C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：949 / 951
页数：3
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