Vertical InGaN light-emitting diodes with Ag paste as bonding layer

被引：4

作者：

Yang, Y. C. ^{[1
]}

Sheu, Jinn-Kong ^{[1
,2
]}

Lee, Ming-Lun ^{[2
,3
]}

Hsu, Che-Kang ^{[1
]}

Tu, Shang-Ju ^{[1
]}

Liu, Shu-Yen ^{[1
]}

Yang, C. C. ^{[1
]}

Huang, Feng-Wen ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[2] So Taiwan Univ, Dept Electroopt Engn, Tainan 71005, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micronanosci & Technol, Tainan 70101, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 05期

关键词：

GAN; FABRICATION;

D O I：

10.1016/j.microrel.2011.06.067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 degrees C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：949 / 951

页数：3

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