A unified model for unipolar resistive random access memory

被引：10
|
作者：
Lee, Kwangseok [1 ]
Jang, Jung-Shik [1 ]
Kwon, Yongwoo [2 ]
Lee, Keun-Ho [2 ]
Park, Young-Kwan [2 ]
Choi, Woo Young [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea
[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Hwasung 445701, Gyunggi Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
NANOFILAMENTS; OXIDES;
D O I：
10.1063/1.3688944
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simulate realistic cell structures with higher accuracy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688944]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
    Makarov, A.
    Sverdlov, V.
    Selberherr, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [32] Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga2O3 Based Resistive Random Access Memory Device
    Cui, Dongsheng
    Du, Yawei
    Lin, Zhenhua
    Kang, Mengyang
    Wang, Yifei
    Su, Jie
    Zhang, Jincheng
    Hao, Yue
    Chang, Jingjing
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 237 - 240
  • [33] The study of lithographic variation in resistive random access memory
    Yuhang Zhang
    Guanghui He
    Feng Zhang
    Yongfu Li
    Guoxing Wang
    Journal of Semiconductors, 2024, 45 (05) : 79 - 90
  • [34] Evaluation of TaOx Nanoparitcles for Resistive Random Access Memory
    Kado, Keisuke
    Ban, Takahiko
    Uenuma, Mutsunori
    Ishikawa, Yasuaki
    Yamashita, Ichiro
    Uraoka, Yukiharu
    2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013), 2013,
  • [35] An improved reconfigurable logic in resistive random access memory
    Zhao Y.
    Chen H.
    Liu P.
    Wu J.
    Luo D.
    Integration, 2022, 87 : 169 - 175
  • [36] Spinel ferrites for resistive random access memory applications
    Gayakvad, Ketankumar
    Somdatta, Kaushik
    Mathe, Vikas
    Dongale, Tukaram
    Madhuri, M.
    Patankar, Ketaki
    EMERGENT MATERIALS, 2024, 7 (01) : 103 - 131
  • [37] A ZnTaOx Based Resistive Switching Random Access Memory
    Zheng, K.
    Zhao, J. L.
    Leck, K. S.
    Teo, K. L.
    Yeo, E. G.
    Sun, X. W.
    ECS SOLID STATE LETTERS, 2014, 3 (07) : Q36 - Q39
  • [38] Recent Advances in Flexible Resistive Random Access Memory
    Tang, Peng
    Chen, Junlong
    Qiu, Tian
    Ning, Honglong
    Fu, Xiao
    Li, Muyun
    Xu, Zuohui
    Luo, Dongxiang
    Yao, Rihui
    Peng, Junbiao
    APPLIED SYSTEM INNOVATION, 2022, 5 (05)
  • [39] Engineering of defects in resistive random access memory devices
    Banerjee, Writam
    Liu, Qi
    Hwang, Hyunsang
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (05)
  • [40] An overview of materials issues in resistive random access memory
    Zhu, Linggang
    Zhou, Jian
    Guo, Zhonglu
    Sun, Zhimei
    JOURNAL OF MATERIOMICS, 2015, 1 (04) : 285 - 295
12345