Evaluation of TaOx Nanoparitcles for Resistive Random Access Memory

被引：0
|
作者：
Kado, Keisuke [1 ]
Ban, Takahiko [1 ]
Uenuma, Mutsunori [1 ]
Ishikawa, Yasuaki [1 ]
Yamashita, Ichiro [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Grad Sch Mat Sci, Nara 6300192, Japan
来源：
2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) | 2013年
关键词：
ReRAM; Nanoparticle; BNP; Ferritin protein; TaOx;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory.
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页数：2
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