Effect of phosphorus addition on physical and electrical properties of tantalum powder

被引：0
|
作者：
Purushotham, Y. [1 ]
Govindaiah, R. [1 ]
Kumar, Arbind [1 ]
Prakash, T. L. [1 ]
机构：
[1] Ctr Mat Elect Technol C MET, Hyderabad 500051, Andhra Pradesh, India
来源：
MODERN PHYSICS LETTERS B | 2007年 / 21卷 / 21期
关键词：
tantalum powder; phosphorus addition; CV; DC leakage;
D O I：
10.1142/S0217984907013675
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present work is aimed at studying the effect of phosphorus addition on physical and electrical properties of tantalum powder. Tantalum anodes were compacted from tantalum powder, which were doped with different concentrations of phosphorus in the form of phosphoric acid. Anodes were sintered at 1550 degrees C for 30 min. Properties such as density, microstructure, CV (capacitance times voltage constant) and DC leakage were studied. Significant improvement in electrical properties was observed, results of which are presented here.
引用
收藏
页码：1431 / 1435
页数：5
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