Single ion implantation with scanning probe alignment

被引：12

作者：

Persaud, A

Allen, FI

Giccluel, F

Park, SJ

Liddle, JA

Schenkel, T

Ivanov, T

Ivanova, K

Rangelow, IW

Bokor, J

机构：

[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Univ Kassel, Fachgebiet Tech Phys, Inst Microstruct Technol & Analyt, D-34132 Kassel, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期

关键词：

D O I：

10.1116/1.1802891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results from our development of a single ion implantation technique integrated with a scanning force microscope. Accurate alignment at the 5 nm level is a crucial requirement for reliable single ion placement. We address this through integration of the ion beam with a scanning probe tip containing an aperture. Single ion registration is based on detection of secondary electron bursts from single, high charge state ions. We describe formation of scanning probe tips with holes and sensing poles by focused ion and electron beam processing (drilling and thin film deposition). Ion transport studies through apertures show stable transmission for >10 h with 1 nA scale beam intensities on precollimators. (C) 2004 American Vacuum Society.

引用

页码：2992 / 2994

页数：3

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