Single ion implantation with scanning probe alignment

We present results from our development of a single ion implantation technique integrated with a scanning force microscope. Accurate alignment at the 5 nm level is a crucial requirement for reliable single ion placement. We address this through integration of the ion beam with a scanning probe tip containing an aperture. Single ion registration is based on detection of secondary electron bursts from single, high charge state ions. We describe formation of scanning probe tips with holes and sensing poles by focused ion and electron beam processing (drilling and thin film deposition). Ion transport studies through apertures show stable transmission for >10 h with 1 nA scale beam intensities on precollimators. (C) 2004 American Vacuum Society.