Raman spectra of amorphous carbon films deposited by SWP

被引:0
|
作者
Xu, Junqi [1 ,2 ]
Liu, Weiguo [1 ]
Hang, Lingxia [1 ]
Su, Junhong [1 ]
Fan, Huiqing [2 ]
机构
[1] Xian Technol Univ, Sch Optoelect Engn, Xian 710032, Peoples R China
[2] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
关键词
amorphous carbon; diamond-like carbon (DLC); surface-wave-sustained plasma (SWP); Raman spectroscopy; SYMMETRIC SURFACE-WAVES; CATHODIC ARC; DLC; COATINGS; PLASMA; SPECTROSCOPY; THIN;
D O I
10.1117/12.865536
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon film is one of the most important anti-reflection protective films coated on infrared optical components. In this paper, hydrogen-free amorphous carbon films were deposited by new type surface-wave-sustained plasma (SWP) source with a graphite target at various experiment parameters. The laser Raman spectroscopy at wavelength of 514 nm was used to investigate the structure and bonding of these carbon films. The results showed consanguineous correlations between the intensity ratio I-D/I-G and the experiment parameters such as microwave power, target voltage and gas pressure applied to the SWP source. Raman spectra proved the structure of these carbon films prepared by SWP technique is typical diamond-like carbon (DLC). The analysis on G peak position and intensity ratio I-D/I-G indicated that Raman shifts moves to low wavenumber and I-D/I-G decreases with the increasing of microwave power from 150 W to 330 W. These results means the formation of sp(3) bond prefers higher microwave power. DLC films prepared at target voltage of -200 V have higher sp(3) content than that of -350 V, moreover, an increase of gas pressure during experiments yields higher sp(3) content at the microwave power below 270 W, whereas the change of sp(3) content is slight with the various conditions when microwave power exceeds 270 W.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Raman spectra of iron-modified amorphous carbon
    Yastrebov, SG
    Ivanov-Omskii, VI
    Kosobukin, VA
    Dumitrache, F
    Morosanu, C
    TECHNICAL PHYSICS LETTERS, 2004, 30 (12) : 995 - 997
  • [32] Raman scattering studies on the structural properties of pulsed laser deposited amorphous carbon nitride thin films
    Rusop, M
    Soga, T
    Jimbo, T
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2005, 19 (23): : 3527 - 3545
  • [33] Micro-Raman spectroscopic analysis of tetrahedral amorphous carbon films deposited under varying conditions
    Liu, E
    Shi, X
    Tay, BK
    Cheah, LK
    Tan, HS
    Shi, JR
    Sun, Z
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6078 - 6083
  • [34] Raman scattering studies on the structural properties of pulsed laser deposited amorphous carbon nitride thin films
    Rusop, M
    Soga, T
    Jimbo, T
    SURFACE REVIEW AND LETTERS, 2005, 12 (02) : 173 - 184
  • [36] Analysis of Raman spectra of amorphous-nanocrystalline silicon films
    S. V. Gaisler
    O. I. Semenova
    R. G. Sharafutdinov
    B. A. Kolesov
    Physics of the Solid State, 2004, 46 : 1528 - 1532
  • [37] Analysis of Raman spectra of amorphous-nanocrystalline silicon films
    Gaisler, SV
    Semenova, OI
    Sharafutdinov, RG
    Kolesov, BA
    PHYSICS OF THE SOLID STATE, 2004, 46 (08) : 1528 - 1532
  • [38] Raman spectra of In0.30Se0.70 amorphous films
    Weszka, J
    Daniel, P
    Burian, AM
    ACTA PHYSICA POLONICA A, 2000, 98 (05) : 619 - 623
  • [39] Raman spectroscopy of amorphous carbon films: State of the art
    Ferrari, AC
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2004, 14 (02): : 87 - 108