Raman spectra of amorphous carbon films deposited by SWP

被引:0
|
作者
Xu, Junqi [1 ,2 ]
Liu, Weiguo [1 ]
Hang, Lingxia [1 ]
Su, Junhong [1 ]
Fan, Huiqing [2 ]
机构
[1] Xian Technol Univ, Sch Optoelect Engn, Xian 710032, Peoples R China
[2] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
关键词
amorphous carbon; diamond-like carbon (DLC); surface-wave-sustained plasma (SWP); Raman spectroscopy; SYMMETRIC SURFACE-WAVES; CATHODIC ARC; DLC; COATINGS; PLASMA; SPECTROSCOPY; THIN;
D O I
10.1117/12.865536
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon film is one of the most important anti-reflection protective films coated on infrared optical components. In this paper, hydrogen-free amorphous carbon films were deposited by new type surface-wave-sustained plasma (SWP) source with a graphite target at various experiment parameters. The laser Raman spectroscopy at wavelength of 514 nm was used to investigate the structure and bonding of these carbon films. The results showed consanguineous correlations between the intensity ratio I-D/I-G and the experiment parameters such as microwave power, target voltage and gas pressure applied to the SWP source. Raman spectra proved the structure of these carbon films prepared by SWP technique is typical diamond-like carbon (DLC). The analysis on G peak position and intensity ratio I-D/I-G indicated that Raman shifts moves to low wavenumber and I-D/I-G decreases with the increasing of microwave power from 150 W to 330 W. These results means the formation of sp(3) bond prefers higher microwave power. DLC films prepared at target voltage of -200 V have higher sp(3) content than that of -350 V, moreover, an increase of gas pressure during experiments yields higher sp(3) content at the microwave power below 270 W, whereas the change of sp(3) content is slight with the various conditions when microwave power exceeds 270 W.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Structural analysis of amorphous carbon and related films using new band in Raman spectra
    Ohkawara, Y
    Ohshio, S
    Suzuki, T
    Ito, H
    Yatsui, K
    Saitoh, H
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2002, 12 (03): : 149 - 152
  • [22] CORRELATION OF THE OPTICAL GAPS AND RAMAN-SPECTRA OF HYDROGENATED AMORPHOUS-CARBON FILMS
    TAMOR, MA
    HAIRE, JA
    WU, CH
    HASS, KC
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 123 - 125
  • [23] Raman spectra of carbon thin films
    Musa, G
    Vladoiu, R
    Ciupina, V
    Janik, J
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (02): : 621 - 623
  • [24] Raman spectroscopy of electrolytically deposited carbon films
    Dymont, VP
    Novikov, VP
    Nekrashevich, EM
    DOKLADY AKADEMII NAUK BELARUSI, 1999, 43 (02): : 37 - 39
  • [25] Raman Spectra Boron Doped Amorphous Carbon Thin Film Deposited by Bias Assisted-CVD
    Ishak, A.
    Fadzilah, A. N.
    Dayana, K.
    Saurdi, I.
    Malek, M. F.
    Nurbaya, Z.
    Shafura, A. K.
    Rusop, M.
    8TH INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY 2017 (NANO-SCITECH 2017), 2018, 1963
  • [26] RAMAN CHARACTERIZATION OF AMORPHOUS-CARBON FILMS
    SCHEIBE, HJ
    DRESCHER, D
    ALERS, P
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1995, 353 (5-8): : 695 - 697
  • [27] RAMAN FINGERPRINTING OF AMORPHOUS-CARBON FILMS
    TAMOR, MA
    VASSELL, WC
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3823 - 3830
  • [28] Raman Studies of Amorphous Carbon Thin Films
    Yukhnovets, Olessya I.
    Maximov, Alexander I.
    Mazing, Dmitry S.
    PROCEEDINGS OF THE 2017 IEEE RUSSIA SECTION YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (2017 ELCONRUS), 2017, : 1217 - 1219
  • [29] Interpretation of infrared and Raman spectra of amorphous carbon nitrides
    Ferrari, AC
    Rodil, SE
    Robertson, J
    PHYSICAL REVIEW B, 2003, 67 (15)
  • [30] Raman spectra of iron-modified amorphous carbon
    S. G. Yastrebov
    V. I. Ivanov-Omskii
    V. A. Kosobukin
    F. Dumitrache
    C. Morosanu
    Technical Physics Letters, 2004, 30 : 995 - 997