Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

被引：9

作者：

Huang, Jiahe ^{[1
]}

Zhao, Xiaofeng ^{[2
]}

Zhang, Hongyan ^{[1
]}

Bai, Ju ^{[1
]}

Wang, Shuhong ^{[1
]}

Wang, Cheng ^{[1
,3
]}

Ma, Dongge ^{[4
]}

Hou, Yanjun ^{[1
]}

机构：

[1] Heilongjiang Univ, Sch Chem Engn & Mat, Harbin 150080, Heilongjiang, Peoples R China

[2] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Heilongjiang, Peoples R China

[3] Heilongjiang Univ, Key Lab Funct Inorgan Mat Chem, Minist Educ, Harbin 150080, Heilongjiang, Peoples R China

[4] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China

来源：

RSC ADVANCES | 2019年 / 9卷 / 17期

基金：

黑龙江省自然科学基金; 中国国家自然科学基金;

关键词：

32;

D O I：

10.1039/c9ra00405j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I-V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.

引用

页码：9392 / 9400

页数：9

共 50 条

[41] Bipolar Resistive Switching Characteristics and Nonvolatile Flash Memory Behavior in Polyvinylcarbazole Films
Enming Zhao
Xiaodan Liu
Guangyu Liu
Bao Zhou
Journal of Electronic Materials, 2020, 49 : 1801 - 1807
[42] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
Lee, D
Choi, H
Sim, H
Choi, D
Hwang, H
Lee, MJ
Seo, SA
Yoo, IK
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) : 719 - 721
[43] Nonvolatile resistive memory devices based on Ag
Jin, Zhiwen
Liu, Guo
Wang, Jizheng
JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (20) : 3282 - 3286
[44] Organic Nonvolatile Memory Devices Based on Ferroelectricity
Naber, Ronald C. G.
Asadi, Kamal
Blom, Paul W. M.
de Leeuw, Dago M.
de Boer, Bert
ADVANCED MATERIALS, 2010, 22 (09) : 933 - 945
[45] Nonvolatile Logic and Memory Devices based on Spintronics
Endoh, Tetsuo
2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2015, : 13 - 16
[46] Perylene-Based columnar liquid Crystal: Revealing resistive switching for nonvolatile memory devices
Avila, L. B.
Chulkin, P.
Serrano, P. A.
Dreyer, J. P.
Berteau-Rainville, M.
Orgiu, E.
Franca, L. D. L.
Zimmermann, L. M.
Bock, H.
Faria, G. C.
Eccher, J.
Bechtold, I. H.
JOURNAL OF MOLECULAR LIQUIDS, 2024, 402
[47] Bipolar Resistance Switching Characteristics in TiN/ZnO:Mn/Pt Junctions Developed for Nonvolatile Resistive Memory Application
Yang, Yu Chao
Fan, Bo
Zeng, Fei
Pan, Feng
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (11) : 7370 - 7373
[48] Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties
Hahm, Suk Gyu
Choi, Seungchel
Hong, Sang-Hyun
Lee, Taek Joon
Park, Samdae
Kim, Dong Min
Kim, Jin Chul
Kwon, Wonsang
Kim, Kyungtae
Kim, Mee-Jung
Kim, Ohyun
Ree, Moonhor
JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (15) : 2207 - 2214
[49] Observation of bistable resistance memory switching in CuO thin films
Kim, C. H.
Jang, Y. H.
Hwang, H. J.
Sun, Z. H.
Moon, H. B.
Cho, J. H.
APPLIED PHYSICS LETTERS, 2009, 94 (10)
[50] Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)
Xin, Ying
Zhao, Xiaofeng
Jiang, Xiankai
Yang, Qun
Huang, Jiahe
Wang, Shuhong
Zheng, Rongrong
Wang, Cheng
Hou, Yanjun
RSC ADVANCES, 2018, 8 (13): : 6878 - 6886

← 1 2 3 4 5 →