Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

被引：9
|
作者：
Huang, Jiahe [1 ]
Zhao, Xiaofeng [2 ]
Zhang, Hongyan [1 ]
Bai, Ju [1 ]
Wang, Shuhong [1 ]
Wang, Cheng [1 ,3 ]
Ma, Dongge [4 ]
Hou, Yanjun [1 ]
机构：
[1] Heilongjiang Univ, Sch Chem Engn & Mat, Harbin 150080, Heilongjiang, Peoples R China
[2] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Heilongjiang, Peoples R China
[3] Heilongjiang Univ, Key Lab Funct Inorgan Mat Chem, Minist Educ, Harbin 150080, Heilongjiang, Peoples R China
[4] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
RSC ADVANCES | 2019年 / 9卷 / 17期
基金：
黑龙江省自然科学基金; 中国国家自然科学基金;
关键词：
32;
D O I：
10.1039/c9ra00405j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I-V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.
引用
收藏
页码：9392 / 9400
页数：9
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