GeO2/PZT Resistive Random Access Memory Devices With Ni electrode

被引：0
|
作者：
Chou, Kun-I [1 ]
Cheng, Chun-Hu [2 ]
Chin, Albert [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei, Taiwan
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
关键词：
RRAM; GeO2; TiO2; PZT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2x10(3) cycles, 85 degrees C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
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页数：2
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