GeO2/PZT Resistive Random Access Memory Devices With Ni electrode

被引：0
|
作者：
Chou, Kun-I [1 ]
Cheng, Chun-Hu [2 ]
Chin, Albert [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei, Taiwan
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
关键词：
RRAM; GeO2; TiO2; PZT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2x10(3) cycles, 85 degrees C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Access Strategies for Resistive Random Access Memory (RRAM)
    Chen, F. T.
    Chen, Y. -S.
    Lee, H. -Y.
    Chen, W. -S.
    Gu, P. -Y.
    Wu, T. -Y.
    Tsai, C. -H.
    Liao, Y. -Y.
    Chen, P. -S.
    Shyuan, S. -S.
    Chiu, P. -F.
    Lin, W. -P.
    Lin, C. -H.
    Tsai, M. -J.
    Ku, T. -K.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 73 - 78
  • [32] Optimization of the Cycle Numbers of TiO2 Resistive Random-Access Memory Devices by Annealing
    Yao, Shuyi
    Li, Yuanxing
    Zhao, Chaozheng
    Wang, Fengying
    Bai, Yujie
    Wang, Yao
    Zhu, Zongtao
    Chen, Hui
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (02) : 1196 - 1205
  • [33] Postdeposition annealing on VO2 films for resistive random-access memory selection devices
    Lim, Heewoo
    Cho, Haewon
    Kim, Hyunjung
    Lee, Namgue
    Shin, Seokyoon
    Jung, Chanwon
    Kim, Hyunjun
    Lim, Kyungpil
    Jeon, Hyeongtag
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (05):
  • [34] Quantized Conductance in Ta2O5 Based Resistive Random Access Memory Devices
    Sahu, V. K.
    Misra, P.
    Das, A. K.
    Ajimsha, R. S.
    Singh, B.
    61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 2017, 1832
  • [35] Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment
    Yun, Min Ju
    Kim, Kyeong Heon
    Bea, Dongju
    Jung, Jinsu
    Kim, Sungjun
    Kim, Hee-Dong
    JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, 2021, 16 (02) : 1011 - 1017
  • [36] Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment
    Min Ju Yun
    Kyeong Heon Kim
    Dongju Bea
    Jinsu Jung
    Sungjun Kim
    Hee-Dong Kim
    Journal of Electrical Engineering & Technology, 2021, 16 : 1011 - 1017
  • [37] In Memory Energy Application for Resistive Random Access Memory
    Trotti, Paola
    Oukassi, Sami
    Molas, Gabriel
    Bernard, Mathieu
    Aussenac, Francois
    Pillonnet, Gael
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12):
  • [38] Effects of erbium doping of indium tin oxide electrode in resistive random access memory
    Chen, Po-Hsun
    Chang, Kuan-Chang
    Chang, Ting-Chang
    Tsai, Tsung-Ming
    Pan, Chih-Hung
    Lin, Chih-Yang
    Jin, Fu-Yuan
    Chen, Min-Chen
    Huang, Hui-Chun
    Lo, Ikai
    Zheng, Jin-Cheng
    Sze, Simon M.
    APPLIED PHYSICS EXPRESS, 2016, 9 (03)
  • [39] Effects of moisture and electrode material on AlN-based resistive random access memory
    Yun, Hee Ju
    Choi, Byung Joon
    CERAMICS INTERNATIONAL, 2019, 45 (13) : 16311 - 16316
  • [40] Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
    Chang, Kuan-Chang
    Tsai, Tsung-Ming
    Chang, Ting-Chang
    Wu, Hsing-Hua
    Chen, Kai-Huang
    Chen, Jung-Hui
    Young, Tai-Fa
    Chu, Tian-Jian
    Chen, Jian-Yu
    Pan, Chih-Hung
    Su, Yu-Ting
    Syu, Yong-En
    Tung, Cheng-Wei
    Chang, Geng-Wei
    Chen, Min-Chen
    Huang, Hui-Chun
    Tai, Ya-Hsiang
    Gan, Der-Shin
    Wu, Jia-Jie
    Hu, Ying
    Sze, Simon M.
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) : 511 - 513
12345