Novel AIN/GaN HEMT Electrical Model including Trapping Effects

被引：0

作者：

Bouslama, Mohamed ^{[1
]}

Couvidat, Julien ^{[1
]}

Al Hajjar, Ahmad ^{[1
]}

Sommet, Raphael ^{[1
]}

Nallatamby, Jean-Christophe ^{[1
]}

机构：

[1] Univ Limoges, CNRS, Xlim, UMR 7252, F-19100 Brive La Gaillarde, France

来源：

INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2018年

关键词：

characterization; modeling; GaN; traps;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulations ones.

引用

页数：3

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