Novel AIN/GaN HEMT Electrical Model including Trapping Effects

被引：0
|
作者：
Bouslama, Mohamed [1 ]
Couvidat, Julien [1 ]
Al Hajjar, Ahmad [1 ]
Sommet, Raphael [1 ]
Nallatamby, Jean-Christophe [1 ]
机构：
[1] Univ Limoges, CNRS, Xlim, UMR 7252, F-19100 Brive La Gaillarde, France
来源：
INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2018年
关键词：
characterization; modeling; GaN; traps;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulations ones.
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页数：3
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