Novel AIN/GaN HEMT Electrical Model including Trapping Effects

被引：0
|
作者：
Bouslama, Mohamed [1 ]
Couvidat, Julien [1 ]
Al Hajjar, Ahmad [1 ]
Sommet, Raphael [1 ]
Nallatamby, Jean-Christophe [1 ]
机构：
[1] Univ Limoges, CNRS, Xlim, UMR 7252, F-19100 Brive La Gaillarde, France
来源：
INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2018年
关键词：
characterization; modeling; GaN; traps;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping effects. It contains a trap model inside the current source which allows to accurately predict gate-lag transient response and low frequency dispersion of the output admittance. The model is validated by comparing the 4 GHz load-pull measurement results with the simulations ones.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] TRANSIENT SIMULATION OF AlGaN/GaN HEMT INCLUDING TRAPPING AND THERMAL EFFECTS
    Zhou, Xingye
    Feng, Zhihong
    Wang, Yuangang
    Gu, Guodong
    Song, Xubo
    Cai, Shujun
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [2] Extension of ASM HEMT Model with Trapping Effects in GaN Power Devices
    Weiser, Mathias
    Kallfass, Ingmar
    2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
  • [3] Characterization and Electrical Modeling including Trapping Effects of AlN/GaN HEMT 4x50μm on silicon substrate
    Bouslama, Mohamed
    Al Hajjar, Ahmad
    Sommet, Raphael
    Medjdoub, Farid
    Nallatamby, Jean-Christophe
    2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2018, : 1301 - 1304
  • [4] Trapping effects on AlGaN/GaN HEMT characteristics
    Raja, P. Vigneshwara
    Nallatamby, Jean-Christophe
    DasGupta, Nandita
    DasGupta, Amitava
    SOLID-STATE ELECTRONICS, 2021, 176
  • [5] Characterization and Electrical Modeling including Trapping Effects of AlN/GaN HEMT 4x50μm on silicon substrate
    Bouslama, Mohamed
    Al Hajar, Ahmad
    Sommet, Raphael
    Medjdoub, Farid
    Nallatamby, Jean-Christophe
    2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2018, : 333 - 336
  • [6] A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation
    Gibiino, Gian Piero
    Santarelli, Alberto
    Filicori, Fabio
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2018, 66 (11) : 4684 - 4697
  • [7] Trapping Related Degradation Effects in AlGaN/GaN HEMT
    Astre, G.
    Tartarin, J. G.
    Lambert, B.
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 298 - 301
  • [8] A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects
    Wen, Zhang
    Xu, Yuehang
    Wang, Changsi
    Zhao, Xiaodong
    Chen, Zhikai
    Xu, Ruimin
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (01)
  • [9] Modelling of hot electron effects in GaN/AlGaN HEMT with AIN interlayer
    Brannick, A.
    Zakhleniuk, N. A.
    Ridley, B. K.
    Eastman, L. F.
    Shealy, J. R.
    Schaff, W. J.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 281 - +
  • [10] Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
    Birafane, A.
    Aflaki, P.
    Kouki, A. B.
    Ghannouchi, F. M.
    SOLID-STATE ELECTRONICS, 2012, 76 : 77 - 83
12345