Interaction effects in high-mobility two-dimensional systems

被引：0
|
作者：
Savchenko, AK [1 ]
Galaktionov, EA [1 ]
Safonov, SS [1 ]
Proskuryakov, YY [1 ]
Li, L [1 ]
Pepper, M [1 ]
Ritchie, DA [1 ]
Linfield, EH [1 ]
Kvon, ZD [1 ]
机构：
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study electron-electron interaction mediated by impurities in the ballistic and intermediate regimes: 0.1 < k(B)T tau/h < 10, where tau is the momentum relaxation time. The interaction correction is shown to contribute to the 'metallic' rho(T) of a 2DHG in GaAs and a 2DEG in Si. Its manifestation in these systems with short-range scattering potential is compared with that in a 2DEG in GaAs, where impurity scattering has a long-range character.
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页码：491 / 492
页数：2
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