Interaction effects in high-mobility two-dimensional systems

被引：0

作者：

Savchenko, AK ^{[1
]}

Galaktionov, EA ^{[1
]}

Safonov, SS ^{[1
]}

Proskuryakov, YY ^{[1
]}

Li, L ^{[1
]}

Pepper, M ^{[1
]}

Ritchie, DA ^{[1
]}

Linfield, EH ^{[1
]}

Kvon, ZD ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study electron-electron interaction mediated by impurities in the ballistic and intermediate regimes: 0.1 < k(B)T tau/h < 10, where tau is the momentum relaxation time. The interaction correction is shown to contribute to the 'metallic' rho(T) of a 2DHG in GaAs and a 2DEG in Si. Its manifestation in these systems with short-range scattering potential is compared with that in a 2DEG in GaAs, where impurity scattering has a long-range character.

引用

页码：491 / 492

页数：2

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