A 5.2GHz Variable Gain Low Noise Amplifier RFIC with Adaptive Biasing for Improved Linearity

被引：1
|
作者：
Xu, Hua [1 ]
Shi, Yin [1 ]
Dai, Fa Foster [2 ]
机构：
[1] SuZhou CAS Semicond Integrat R&D Ctr, Suzhou, Peoples R China
[2] Auburn Univ, Elec & Comp Engn Dept, Auburn, AL 36849 USA
来源：
2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2010年
关键词：
LNA; charge pump; WLAN; adaptive biasing; variable gain; IIP3;
D O I：
10.1109/BIPOL.2010.5667995
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 5.2-GHz adaptively-biased variable gain-low noise amplifier (VG-LNA) using SiGe BiCMOS technology. Usage of bias and gain control simultaneously to achieve high input-referred third-order intercept point (IIP3) is demonstrated. A charge pump is used to transform the RF output signal of LNA to dc control signal. Measurement results show that with 3.3V power supply, the LNA exhibits a tunable bias from 3mA to 10.85mA with gain tuning range of 13dB, and a 14.5dBm IIP3 improvement. In the high gain mode, the noise figure of 2.82 of the LNA is achieved.
引用
收藏
页码：224 / 227
页数：4
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