A 5.2GHz Variable Gain Low Noise Amplifier RFIC with Adaptive Biasing for Improved Linearity

被引：1

作者：

Xu, Hua ^{[1
]}

Shi, Yin ^{[1
]}

Dai, Fa Foster ^{[2
]}

机构：

[1] SuZhou CAS Semicond Integrat R&D Ctr, Suzhou, Peoples R China

[2] Auburn Univ, Elec & Comp Engn Dept, Auburn, AL 36849 USA

来源：

2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2010年

关键词：

LNA; charge pump; WLAN; adaptive biasing; variable gain; IIP3;

D O I：

10.1109/BIPOL.2010.5667995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 5.2-GHz adaptively-biased variable gain-low noise amplifier (VG-LNA) using SiGe BiCMOS technology. Usage of bias and gain control simultaneously to achieve high input-referred third-order intercept point (IIP3) is demonstrated. A charge pump is used to transform the RF output signal of LNA to dc control signal. Measurement results show that with 3.3V power supply, the LNA exhibits a tunable bias from 3mA to 10.85mA with gain tuning range of 13dB, and a 14.5dBm IIP3 improvement. In the high gain mode, the noise figure of 2.82 of the LNA is achieved.

引用

页码：224 / 227

页数：4

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