High-K/Metal Gate technology: A new horizon

被引：4
|
作者：
Khare, Mukesh [1 ]
机构：
[1] IBM Corp, Syst & Technol Grp, Hopewell Jct, NY 12533 USA
来源：
PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2007年
关键词：
D O I：
10.1109/CICC.2007.4405765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-K/Metal Gate technology represents a fundamental change in transistor structure that restarts gate length scaling, enables performance improvement and offers chip power reduction. The gate stack presented is compatible with conventional high temperature CMOS processing and existing performance enhancement elements. A new knob in the form of metal gate work function promises separate and better optimization for High Performance and Low Power applications. This technology introduces a unique PBTI reliability mechanism for N-FET that is now well understood and modeled.
引用
收藏
页码：417 / 420
页数：4
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