Low-threshold 1.3 mu m wavelength, strained-layer InGaAsP multi-quantum well lasers grown by all solid source molecular beam epitaxy

We report the growth, by all solid source molecular beam epitaxy (SSMBE) of low-threshold 1.3 mu m wavelength strained-layer InGaAsP multi-quantum well lasers. A threshold current density of 400 A/cm(2) was achieved for a 1600 mu m long broad-area laser, and a threshold current of 18 mA was measured for a 5 x 320 mu m as-cleased area ridge waveguide laser. These are the lowest values reported for SSMBE grown material, and the fabricated lasers compare favourably to the best devices grown by other techniques.