A 0.8V CMOS Bandgap Voltage Reference Design

被引：0
|
作者：
Zhang, Bolun [1 ]
Cui, Xiaole [1 ]
Zhang, Yifan [1 ]
Yang, Chun [1 ]
Xiao, Ying [1 ]
Lin, Xinnan [1 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Guangdong, Peoples R China
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
bandgap reference; low voltage; temperature compensation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-voltage bandgap reference implemented in 0.18 mu m CMOS process is designed. The bandgap reference circuit is optimized by adjusting the ratio of the resistors, and reducing the working voltage of operational amplifier. It achieves the performance of a temperature coefficient of 25 ppm/degrees C in the range of 0 similar to 100 degrees C which works under the voltage of 0.8V. The simulated power supply rejection ratio is 46.3dB @1Hz and the line regulation is 1.5mV/V in the range from 0.8V to 1.8V.
引用
收藏
页码：356 / 359
页数：4
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