Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium Oxide

被引：39

作者：

Wu, Shiwei ^{[1
]}

Wang, Hong ^{[1
]}

Sun, Jing ^{[1
]}

Song, Fang ^{[1
]}

Wang, Zhan ^{[1
]}

Yang, Mei ^{[1
]}

Xi, He ^{[1
]}

Xie, Yong ^{[1
]}

Gao, Haixia ^{[1
]}

Ma, Jigang ^{[2
]}

Ma, Xiaohua ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semiconductor Technol, Sch Adv Mat & Nanotechnol, Xian 71007, Peoples R China

[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Resistive switching memory; magnesium oxide; transient electronics; TRANSIENT;

D O I：

10.1109/LED.2016.2585665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, dissolvable and biodegradable resistive switching devices with a cell structure of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory characteristics for nonvolatile application. The dissolution rate of Mg and MgO is characterized in deionized (DI) water and in phosphate-buffered saline solution, with clear difference, 0.36, 1.25, 0.057, and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk fibroin substrates are able to be completely dissolved as fast as 30 min while immersed in DI water. The Mg/MgO/Mg devices have excellent prospects for the applications in transient electronics, secure memory systems, and implantable medical therapy devices.

引用

页码：990 / 993

页数：4

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