Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.
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Gen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Sun, Lu
Hao, Xiamin
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Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Hao, Xiamin
Meng, Qingling
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Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Meng, Qingling
Wang, Ligen
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Gen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Wang, Ligen
Liu, Feng
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Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China
Liu, Feng
Zhou, Miao
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Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaGen Res Inst Nonferrous Met, Mat Computat Ctr, Beijing 100088, Peoples R China