Resistive Switching Memory Devices Based on Proteins

被引:149
|
作者
Wang, Hong [1 ]
Meng, Fanben [1 ]
Zhu, Bowen [1 ]
Leow, Wan Ru [1 ]
Liu, Yaqing [1 ]
Chen, Xiaodong [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; NONVOLATILE MEMORY; SILK FIBROIN; MEMRISTIVE DEVICES; ELECTRON-TRANSPORT; STATE; RESISTANCE; JUNCTIONS; GRAPHENE;
D O I
10.1002/adma.201405728
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.
引用
收藏
页码:7670 / 7676
页数:7
相关论文
共 50 条
  • [21] Characterization of Resistive Switching Memory Devices with Tunnel Barrier
    Kim, Sungjun
    Kim, Min-Hwi
    Kim, Tae-Hyeon
    Bang, Suhyun
    Lee, Dong Keun
    Chani, Yao-Feng
    Park, Byung-Gook
    2017 SILICON NANOELECTRONICS WORKSHOP (SNW), 2017, : 87 - 88
  • [22] Nanoscale resistive switching devices for memory and computing applications
    Seung Hwan Lee
    Xiaojian Zhu
    Wei D. Lu
    Nano Research, 2020, 13 : 1228 - 1243
  • [23] Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin
    Wang, Hong
    Zhu, Bowen
    Wang, Hua
    Ma, Xiaohua
    Hao, Yue
    Chen, Xiaodong
    SMALL, 2016, 12 (25) : 3360 - +
  • [24] Flexible, transferable and conformal egg albumen based resistive switching memory devices
    Zhu, J. X.
    Zhou, W. L.
    Wang, Z. Q.
    Xu, H. Y.
    Lin, Y.
    Liu, W. Z.
    Ma, J. G.
    Liu, Y. C.
    RSC ADVANCES, 2017, 7 (51): : 32114 - 32119
  • [25] Resistive switching properties of alkaline earth oxide-based memory devices
    Lee, Ke-Jing
    Chang, Yu-Chi
    Lee, Cheng-Jung
    Wang, Li-Wen
    Wang, Yeong-Her
    MICROELECTRONICS RELIABILITY, 2018, 83 : 281 - 285
  • [26] Localized Heating and Switching in MoTe2-Based Resistive Memory Devices
    Datye, Isha M.
    Rojo, Miguel Munoz
    Yalon, Eilam
    Deshmukh, Sanchit
    Mleczko, Michal J.
    Pop, Eric
    NANO LETTERS, 2020, 20 (02) : 1461 - 1467
  • [27] Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices
    Sarkar, Surajit
    Rahman, Farhana Yasmin
    Banik, Hritinava
    Majumdar, Swapan
    Bhattacharjee, Debajyoti
    Hussain, Syed Arshad
    LANGMUIR, 2022, 38 (30) : 9229 - 9238
  • [28] Resistive Switching in Polyvinylpyrrolidone/Molybdenum Disulfide Composite-Based Memory Devices
    Dlamini, Z. W.
    Vallabhapurapu, S.
    Srinivasan, A.
    Wu, S.
    Vallabhapurapu, V. S.
    ACTA PHYSICA POLONICA A, 2022, 141 (05) : 439 - 444
  • [29] Effect of carrier screening on ZnO-based resistive switching memory devices
    Sun, Yihui
    Yan, Xiaoqin
    Zheng, Xin
    Li, Yong
    Liu, Yichong
    Shen, Yanwei
    Ding, Yi
    Zhang, Yue
    NANO RESEARCH, 2017, 10 (01) : 77 - 86
  • [30] Effect of carrier screening on ZnO-based resistive switching memory devices
    Yihui Sun
    Xiaoqin Yan
    Xin Zheng
    Yong Li
    Yichong Liu
    Yanwei Shen
    Yi Ding
    Yue Zhang
    Nano Research, 2017, 10 : 77 - 86