Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

被引：26

作者：

Vassilevski, K

Zekentes, K

Tsagaraki, K

Constantinidis, G

Nikitina, I

机构：

[1] Fdn Res & Technol Hellas, Microelect Res Grp, Iraklion 71110, Crete, Greece

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期

关键词：

silicon carbide; ohmic contacts; cermet; aluminum; thermionic emission;

D O I：

10.1016/S0921-5107(00)00597-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ohmic contacts to the top p-type layers of 4H-SiC p(+)-n-n(+) epitaxial structures having an acceptor concentration lower than 1 x 10(19) cm(-3) were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni2Si and TiC phases. The decomposition of the SIC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R-c of 9 x 10(-5) Omega cm(-2) at 21 degreesC, decreasing to 3.1 x 10(-5) Omega cm(-2) at 186 degreesC. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant curl ent transport mechanism in the fabricated contacts. (C) 2001 Elsevier Science B.V. AII rights reserved.

引用

页码：370 / 373

页数：4

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