Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

被引：26
|
作者：
Vassilevski, K
Zekentes, K
Tsagaraki, K
Constantinidis, G
Nikitina, I
机构：
[1] Fdn Res & Technol Hellas, Microelect Res Grp, Iraklion 71110, Crete, Greece
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词：
silicon carbide; ohmic contacts; cermet; aluminum; thermionic emission;
D O I：
10.1016/S0921-5107(00)00597-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ohmic contacts to the top p-type layers of 4H-SiC p(+)-n-n(+) epitaxial structures having an acceptor concentration lower than 1 x 10(19) cm(-3) were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni2Si and TiC phases. The decomposition of the SIC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R-c of 9 x 10(-5) Omega cm(-2) at 21 degreesC, decreasing to 3.1 x 10(-5) Omega cm(-2) at 186 degreesC. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant curl ent transport mechanism in the fabricated contacts. (C) 2001 Elsevier Science B.V. AII rights reserved.
引用
收藏
页码：370 / 373
页数：4
相关论文
共 50 条
  • [11] Thermal formation of titanium ohmic contacts for 4H-SiC silicon carbide
    Kwietniewski, Norbert
    Szarafinski, Jakub
    Sochacki, Mariusz
    Szmidt, Jan
    Kaszub, Wawrzyniec
    Ciuk, Tymoteusz
    PRZEGLAD ELEKTROTECHNICZNY, 2019, 95 (09): : 172 - 174
  • [12] Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC
    Laariedh, F.
    Lazar, M.
    Cremillieu, P.
    Leclercq, J. -L.
    Planson, D.
    HETEROSIC & WASMPE 2011, 2012, 711 : 169 - +
  • [13] Ti/Al/Au OHMIC CONTACTS TO p-TYPE 4H-SiC
    Han, Chao
    Zhang, Yuming
    Song, Qingwen
    Zhang, Yimen
    Tang, Xiaoyan
    Guo, Hui
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [14] Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40°C to 500°C
    Smedfors, K.
    Lanni, L.
    Ostling, M.
    Zetterling, C-M
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 681 - +
  • [15] Ti and TiAl-based ohmic contacts to 4H-SiC
    Martychowiec, Agnieszka
    Kwietniewski, Norbert
    Kondracka, Kinga
    Werbowy, Aleksander
    Sochacki, Mariusz
    PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH ENERGY PHYSICS EXPERIMENTS 2020, 2020, 11581
  • [16] On the Ti3SiC2 Metallic Phase Formation for p-type 4H-SiC Ohmic Contacts
    Jennings, M. R.
    Fisher, C. A.
    Walker, D.
    Sanchez, A.
    Perez-Tomas, A.
    Hamilton, D. P.
    Gammon, P. M.
    Burrows, S. E.
    Thomas, S. M.
    Sharma, Y.
    Li, F.
    Mawby, P. A.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 693 - +
  • [17] The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC
    Kim, BK
    Burm, J
    An, C
    2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 97 - 101
  • [18] Ti/Ni bilayer Ohmic contact on 4H-SiC
    Ohyanagi, Takasumi
    Onose, Yasuo
    Watanabe, Atsuo
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1359 - 1362
  • [19] Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
    Vivona, M.
    Greco, G.
    Lo Nigro, R.
    Bongiorno, C.
    Roccaforte, F.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (03)
  • [20] Simultaneous Formation of Ni/Ti/Al/Ag Ohmic Contacts to both p- and n- type for 4H-SiC RSD
    Yan, Xiaoxue
    Liang, Lin
    Zhang, Ludan
    2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019), 2019,
12345