A 0.6V temperature-stable CMOS voltage reference circuit with sub-threshold voltage compensation technique

被引:7
|
作者
Cai, Zhikuang [1 ,2 ]
Chen, Chao [2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 18期
基金
中国国家自然科学基金;
关键词
reference circuit; near-threshold; low-supply voltage;
D O I
10.1587/elex.15.20180760
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a CMOS reference circuit which can work properly under the near-threshold voltage of 0.6 V. It is based on the temperature characteristic of NMOS&PMOS transistors in the sub-threshold region. The temperature curve of the NMOS quasi-PTAT current and the PMOS quasi-PTAT current can be adjusted to have the same slope factor. Thus a temperature-stable reference voltage can be achieved by subtracting the quasi-PTAT voltage generated by the NMOS and PMOS circuits. It can be used under the supply voltage of 0.6 V, under which a traditional bipolar-based band gap reference cannot work properly. The circuit is designed and implemented in SMIC 65 nm CMOS process. It provides a nominal reference voltage of 154 mV, a average temperature coefficient of 87 ppm/degrees C in [-10 degrees C similar to 80 degrees C] under a 0.6 V supply voltage. The total power consumption is 60 mu W and the chip area is 345 um * 182 um.
引用
收藏
页数:8
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