A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction

被引：0
|
作者：
Eduardo Toledo, Luis [1 ]
Petrashin, Pablo A. [1 ]
Lancioni, Walter J. [1 ]
Dualibe, Fortunato Carlos
Rafael Canali, Luis
机构：
[1] Univ Catolica Cordoba, Fac Ingn, Cordoba, Argentina
来源：
2013 IEEE 4TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a +/- 38.2 ppm/degrees C temperature coefficient within the range of -20 degrees C to 100 degrees C.
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页数：4
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