Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching

被引：11
|
作者：
Nakamura, Toshihiro [1 ]
Homma, Kohei [1 ]
Yakushiji, Takashi [1 ]
Tai, Ryusuke [1 ]
Nishio, Akira [1 ]
Tachibana, Kunihide [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 22-23期
关键词：
MOCVD; resistance switching; resistance random access memory; manganite;
D O I：
10.1016/j.surfcoat.2007.04.090
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pr1-xCaxMnO3(PCMO) films with the desired atomic composition were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The I-V characteristics exhibited nonlinear, asymmetric, and hysteretic behavior in PCMO-based devices with top electrode of Al or Ti. The electric-pulse-induced resistance switching was observed in the PCMO-based devices. The resistance change was dependent on the Pr/Ca composition ratio of the PCMO films and the kind of the top electrodes. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：9275 / 9278
页数：4
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